柔性衬底上六噻吩薄膜的有序生长  

Growth of Well-ordered Sexithiophene Films on Flexible Substrates

作　　者：沐俊应[1] 陈振兴[1] 梁氏秋水[2] 

机构地区：[1]中南大学化学化工学院,长沙410083 [2]中山大学化学与化学工程学院,广州510275

出　　处：《微细加工技术》2007年第6期15-17,39,共4页Microfabrication Technology

基　　金：国家自然科学基金资助项目(20576141);教育部留学回国人员科研启动基金资助项目(教外司留[2005]546号)

摘　　要：采用石英晶体微天平实时监测薄膜生长速率,控制衬底温度和生长速率,分别在柔性聚乙烯吡咯烷酮(PVP)绝缘层和柔性氧化铟锡(ITO)透明导电层上真空蒸发沉积了分子有序排列的六噻吩薄膜。X射线衍射分析表明,对PVP层而言,六噻吩薄膜有序生长的条件为衬底温度90℃、生长速率10 nm/min,六噻吩分子链始终与衬底平行,降低衬底温度将导致薄膜结晶度的下降。而对ITO层来说,六噻吩薄膜有序生长的条件为衬底温度50℃、生长速率10 nm/min,衬底温度显著影响了六噻吩分子取向,室温下六噻吩分子链与衬底成一定夹角,随着温度的提高六噻吩分子链趋向与衬底平行。对PVP和ITO衬底,生长速率太高或太低都将导致薄膜结晶度的下降。Through optimizing evaporation conditions such as substrate temperature and growth rate detected by in situ quartz crystal microbalance measurement,well-ordered sexithiophene films were deposited on flexible insulating polyvinylpyrrolidone(PVP) layers and flexible transparent conductive indium tin oxide(ITO) layers.X-ray diffraction investigation showed that well-ordered sexithiophene film was deposited at growth rate 10 nm/min and substrate temperature 90 ℃ on PVP substrate,the main axis of sexithiophene molecules was found parallel to the substrate,and thin film crystalline declined with the decrease of substrate temperature.On ITO substrate,well-ordered sexithiophene film was deposited at 10 nm/min and 50 ℃.Substrate temperature notably influenced molecule orientation of sexithiophene on ITO layers.At room temperature there existed an included angle between the main axis of sexithiophene molecules and ITO substrate surface. With the increase of substrate temperature,the main axis tended to parallel to substrate surface.On both substrates,too low or too high growth rate led to poor crystalline.

关 键 词：六噻吩 有机半导体 柔性衬底 真空蒸发沉积 有序薄膜 

分 类 号：O649.5[理学—物理化学]