Deposition of antimony telluride thin film by ECALE  

作　　者：GAO Xianhui YANG Junyou ZHU Wen HOU Jie BAO Siqian FAN Xi'an DUAN Xingkai 

机构地区：[1]Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China

出　　处：《Science China(Technological Sciences)》2006年第6期685-692,共8页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.50401008);the Prophase Foundation for National Fundamental Research(Grant No.2004CCA03200);the Graduate Student Innovation Foundation of HUST.

摘　　要：The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.

关 键 词：Sb2Te3  ECALE  THERMOELECTRIC materials  nanomaterials. 

分 类 号：TH[机械工程]