铝注入的电力半导体器件产品的优势及其进一步开发  

Advantage and Development of Aluminium Implanted Power Semiconductor Device Products

作　　者：S.柯雷 A.米林顿 A.普鲁姆顿 尤金霜[2] 

机构地区：[1]丹尼克斯半导体公司 [2]北京金自天正公司

出　　处：《电气技术》2006年第7期82-86,共5页Electrical Engineering

摘　　要：Dynex半导体公司用于功率双极半导体器件制造的铝注入技术(“i2”)的问世得到文献的肯定。本文介绍采用这种技术所获得的各种益处,特别讨论满足增加HVDC(高压直流输电)开关功率的需求、改善整流二极管制造能力、提高脉冲电源的极高电压/极大电流能力,以及大面积晶闸管并联均流的有效参数匹配等重要课题。本文也涉及到器件键合和150mm直径的硅片制造事项。“i2”技术的灵活性最适合于为可预见的未来提供最佳的功率器件。The emergence of aluminium implant technology (“i2”) at Dynex Semiconductor for the manufacture of power bipolar semiconductor devices has been well documented. This paper addresses a variety of applications benefits to be gained by use of this technology. In particular, meeting the demand for increasing HVDC switching power, improved converter diode manufacturability, very high voltage/current capability for pulse power, and efficient parameter matching for large area thyristor parallel sharing are discussed. Bonding devices and 150mm-wafer diameter fabrication are also covered. It is concluded that the flexibility of “i2” technology is most suited to provide state of art power devices well into the foreseeable future.

关 键 词：双注入("i2") 铝注入技术 功率双极半导体器件 高压直流输电 (HVDC) 

分 类 号：TN301[电子电信—物理电子学]