[111]方向电场诱导的硅的倍频效应  

Effective double-frequency effect induced by direct electric field along the [111]-orientation

作　　者：刘秀环[1] 陈占国[1] 贾刚[1] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《红外与激光工程》2007年第z1期382-386,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(60476027)

摘　　要：理论上研究了硅晶体在[111]方向电场的作用下等效二阶极化率张量与C3V点群晶体的二阶极化率张量的形式相同;在此基础上研究了硅的[111]方向电场诱导的倍频效应,可以使入射光垂直于{110}面入射,从而研究硅的场致倍频效应随基频光偏振方向的变化。设计了底面为(110)面的半球形硅样品,为从实验上研究[111]方向电场诱导的硅的倍频效应,提出了一种实验方案。The effective second-order susceptibility induced by [111]-orientated electric field applied to Si is theoretically studied to be the same form as that of the C3V symmetry group of crystals.The [111]-orientated electric field-induced double-frequency absorption(EFIDFA) in Si is further studied,in which the anisotropy of EFIDFA can be observed by making the fundamental light propagate perpendicularly to the {110}planes.A hemispherical Si sample with bottom of(110) plane is designed,and a scheme of research on the [111]-orientated EFIDFA in Si is also proposed.

关 键 词：硅晶体 场致等效二阶极化率 场致倍频吸收 双光子响应 

分 类 号：O437:0472[机械工程—光学工程]