阴离子掺杂ZnO的荧光光谱和X光电子能谱特征  

Photoluminescence and XPS Characterization of Zinc Oxide Doped with Anions

作　　者：李颖毅[1] 李振华[1] 徐欣[1] 李永绣[1] 

机构地区：[1]南昌大学材料科学与工程学院,南昌330031

出　　处：《有色金属》2010年第1期48-51,共4页Nonferrous Metals

基　　金：教育部高校骨干青年教师资助项目(GG-430-10403-1970);南昌大学"211"重点项目

摘　　要：以溴化铵为助熔剂,在较低温度(~800℃)下的空气气氛中煅烧硫化锌合成了S2-和Br-共掺杂ZnO绿色荧光粉。采用XPS技术对该类ZnO荧光粉绿光发射的原因进行探讨,认为S2-和Br-共掺杂将促进ZnO中氧空穴和锌空穴的形成,使光生电子从禁带中的这些局域缺陷中心跃迁至深陷阱的空穴而产生强的绿色发射。The bromide and sulfur co-doped ZnO phosphors with highly efficient green luminescent emission are prepared by calcining ZnS in air atmosphere at 800℃ with NH4Br as flux.The origin of green emission is investigated by means of XPS technique.It is found that doping with S and Br in ZnO results in the formation of oxygen vacancy V′O and zinc hole V′Zn,and the green emission band could be ascribed to a transition of a photogenerated electron from the localized defect centers(V′O) to a deeply trapped hole(V′Zn)...

关 键 词：无机非金属材料 ZNO NH4Br 光电子能谱 绿色荧光粉 缺陷 

分 类 号：O614.241[理学—无机化学]