Rare earth doped CaCu_3Ti_4O_(12) electronic ceramics for high frequency applications  

作　　者：慕春红 张怀武 刘颖力 宋远强 刘鹏 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [2]School of Physics and Information Technology,Shaanxi Normal University

出　　处：《Journal of Rare Earths》2010年第1期43-47,共5页稀土学报（英文版）

基　　金：supported by the National Basic Research Program of China (973) (2007CB31407);Foundation for Innovative Research Groups of the NSFC (60721001);the Young Fund of Sichuan Province (08ZQ026-013);the National Natural Science Foundation of China (50972023, 50872078)

摘　　要：Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping....Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping....

关 键 词：CACU3TI4O12 dielectric relaxation electronic ceramics LTCC devices rare earth ions doping 

分 类 号：TQ174.1[化学工程—陶瓷工业]