Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films  

作　　者：CHEN Yanwei1,2, YU Wenhua1 & LIU Yichun1,2 1. Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, China 2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, China 

出　　处：《Science China(Physics,Mechanics & Astronomy)》2004年第5期588-596,共9页中国科学：物理学、力学、天文学（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(Grant Nos.60176003 and 60376009).

摘　　要：In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure andc-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.7×10?4 Ω⊙cm at room temperature. These films exhibit a carrier density above 1020 cm?3. The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range.In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure and c-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.710-4 Ocm at room temperature. These films exhibit a carrier density above 1020 cm-3. The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range.

关 键 词：ZnO: Al thin film  photoluminescence  electrical properties  STRUCTURAL properties  VAN der Pauw measurement. 

分 类 号：O484[理学—固体物理]