Influence of reaction temperature on the formation process of ZnO quantum dots and the optical properties  

作　　者：庄晋艳 李岚 张晓松 徐建萍 魏军 

机构地区：[1]Insititute of Material Physics,Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education,Tianjin Key Laboratory for Optoelectronic Materials and Devices,Tianjin University of Technology [2]Insititute of Material Physics,Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education,Tianjin Key Laboratory for Optoelectronic Materials and Devices,Tianjin University of Technology [3]Colloge of Information Science, Tianjin University of Technology [4]Singapore Institute of Manufacturing Technology

出　　处：《Optoelectronics Letters》2009年第1期1-5,共5页光电子快报（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant No.60877029);supported by the Tianjin Natural Science Foundation (Grant No.07JCYBJC0640006TXTJJC14600);supported by the Subject of Science and Technology Development Fund at University of Tianjin (Grant No.20071207)

摘　　要：ZnO quantum dots (QDs)with the sizes of 3.0-5.6 nm are synthesized by solution-phase method at different temperatures. We find that temperature has great influence on the size of ZnO QDs. The growth process is the most sensitive to temperature, and the process is well explained by Lifshitz–Slyozov–Wagner (LSW) model. By photoluminescence (PL) spectra of the quantum dots at different temperatures and reactive time, we come to a conclusion that ultraviolet emission is mainly due to surface defects, and the or...

关 键 词：Electron mobility Emission spectroscopy Optical properties Semiconducting zinc compounds Surface defects Zinc oxide 

分 类 号：TN304.21[电子电信—物理电子学]