CuO掺杂BFS基厚膜热敏电阻的研制  

Development of CuO-doped BFS based thick film thermistor

作　　者：石雨[1] 刘心宇[1,2] 李川[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系,广西桂林541004 [2]中南大学材料科学与工程学院,湖南长沙410083

出　　处：《电子元件与材料》2010年第6期7-9,共3页Electronic Components And Materials

基　　金：广西自然科学基金资助项目(No.桂科字0447092);桂林电子科技大学基金资助项目(No.E20694)

摘　　要：以固相法制备的BaFe1–xSnxO3(BFS)材料为功能相、BaBiO3为粘结相、CuO为掺杂剂,制备了新型BFS基厚膜热敏电阻浆料,并用此浆料制备了BFS基厚膜热敏电阻。借助SEM和ρ-t特性测试仪,研究了CuO掺杂量对所制电阻显微结构及电性能的影响。结果表明:随着CuO掺杂量的增加,BFS基厚膜热敏电阻的方阻逐渐降低,其B25/85值则先缓慢上升,接着迅速降低,而后又逐渐增加。当CuO质量分数为14%时,所得电阻样品性能较好且具有明显的NTC特性,其方阻、B25/85值及电阻温度系数αR分别为:2.8×105?·□–1,3285K和3.69×10–2℃–1。The paste of a new type of BFS based thick film thermistor was prepared with BaFe1–xSnxO3(BFS) prepared by the solid state method as the functional phase, BaBiO3 as the binder and CuO as the dopant. The effects of doping amount of CuO on the microstructure and electrical properties of the prepared thermistors were studied with SEM and ρ-t measuring instrument. The results show that the square resistance of the BFS based thick film thermistors decreases gradually with increasing doping amount of CuO, while t...

关 键 词：BFS基厚膜热敏电阻 BaFe1–xSnxO3(BFS) BaBiO3 CuO掺杂量 

分 类 号：TN37[电子电信—物理电子学]