缓蚀剂对提高腐蚀箔比容的影响  

Effect of inhibitor on specific capacitance of etched Al foils

作　　者：杨富国[1] 

机构地区：[1]佛山科学技术学院,广东佛山528000

出　　处：《电子元件与材料》2010年第7期54-56,共3页Electronic Components And Materials

基　　金：校博士科研启动基金资助项目(No.2010BS001)

摘　　要：采用硫酸-盐酸体系环保型铝电解电容器用阳极箔腐蚀工艺,在扩孔液中分别加入乙酸、丙酸和乙二酸作为缓蚀剂,结合SEM分析对缓蚀剂在腐蚀扩孔中的缓蚀机理进行了探讨,研究了直流电侵蚀时缓蚀剂对腐蚀箔比容的影响。结果表明:缓蚀剂的引入提高了腐蚀箔比容,当乙酸、丙酸和乙二酸三种缓蚀剂的质量浓度ρ增加到0.5g/L时,所制腐蚀箔比容达到最大值,分别为1.10×10^(–6),1.07×10^(–6)和1.12×10^(–6)F/cm^2。乙二酸的缓蚀效果最好,可使腐蚀箔的比容提高25%以上。The etching process of anodic foil for Al electrolytic capacitor in H2SO4-HCl solution for environmentally-friendly type was used. In the extending hole solution , CH3COOH、CH3CH2COOH and (CH2COOH)2 were added as inhibitor respectively. The corrosion mechanism of inhibitor were discussed by means of SEM. The effect of inhibitor on specific capacitance of etched Al foils was investigated in DC electrolytic etching. The results show that the introduction of the inhibitor such as CH3COOH、CH3CH2COOH and (CH2COOH...

关 键 词：铝电解电容器 腐蚀 缓蚀剂 

分 类 号：TM535[电气工程—电器]