Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique  

作　　者：冯淦 朱建军 沈晓明 张宝顺 赵德刚 王玉田 杨辉 梁骏吾 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2003年第4期437-440,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.69825107,NSFC-RGC Joint program:NSFC5001161953 and N_HKU028/00)

摘　　要：In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

关 键 词：GaN  X-RAY diffraction  thickness 

分 类 号：O434.12[机械工程—光学工程]