Stress analysis of electrostrictive material with an elliptic defect  

作　　者：蒋泉 匡震邦 

机构地区：[1]Department of Engineering Mechanics, Shanghai Jiaotong University, Shanghai 200240, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2003年第5期492-500,共9页中国科学：物理学、力学、天文学（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China (Grant Nos.10132010 and 10072033).

摘　　要：It is shown that the constitutive equation and electric body force used to discuss the stress analysis of electrostrictive material in some previous literature are not appropriate. This paper presents the corrected stress solution for the infinite plane with an insulated elliptic hole under an applied electrical field. The numerical result obtained for the PMN material constants show that the stress near the end of the narrow elliptic hole is the tensile stress.It is shown that the constitutive equation and electric body force used to discuss the stress analysis of electrostrictive material in some previous literature are not appropriate. This paper presents the corrected stress solution for the infinite plane with an insulated elliptic hole under an applied electrical field. The numerical result obtained for the PMN material constants show that the stress near the end of the narrow elliptic hole is the tensile stress.

关 键 词：electrostriction  ELLIPTIC hole  CONFORMAL transformation. 

分 类 号：TM27[一般工业技术—材料科学与工程]