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机构地区:[1]Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China [2]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
出 处:《Science China(Physics,Mechanics & Astronomy)》2003年第5期528-534,共7页中国科学:物理学、力学、天文学(英文版)
基 金:This work was supported by the National Natural Science Foundation of China (Grant Nos. 10134010, 19804012, 10274058, 10274088),
摘 要:This paper reports the measured results of the 200 nm-1000 nm characteristic spectral lines of Al, Si and Ar atoms when highly charged ions 40Ar10+ are incident upon Al and P-type Si surfaces. The ion 40Ar10+ is provided by the ECR ion source of the National Laboratory of the Heavy Ion Accelerator in Lanzhou. The results show that when the low-speed ions in the highly charged state interact with the solid surfaces, the characteristic spectral lines of the target atoms and ions spurted from the surfaces can be effectively excited. Moreover, because of the competition of the non-radiation de-excitation of the hollow atom by emitting secondary electrons with the de-excitation process by radiating photons, the spectral intensity of the characteristic spectral lines of Ar atoms on the P-type Si surface is, as a whole, greater than that of Ar atoms on the Al surface.This paper reports the measured results of the 200 nm-1000 nm characteristic spectral lines of Al, Si and Ar atoms when highly charged ions 40Ar10+ are incident upon Al and P-type Si surfaces. The ion 40Ar10+ is provided by the ECR ion source of the National Laboratory of the Heavy Ion Accelerator in Lanzhou. The results show that when the low-speed ions in the highly charged state interact with the solid surfaces, the characteristic spectral lines of the target atoms and ions spurted from the surfaces can be effectively excited. Moreover, because of the competition of the non-radiation de-excitation of the hollow atom by emitting secondary electrons with the de-excitation process by radiating photons, the spectral intensity of the characteristic spectral lines of Ar atoms on the P-type Si surface is, as a whole, greater than that of Ar atoms on the Al surface.
关 键 词:highly CHARGED ion HOLLOW atom characteristic spectrum spectral intensity.
分 类 号:O572[理学—粒子物理与原子核物理]
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