储能晶界层电容材料的研究进展  

Research progress of energy storage boundary-layer capacitor material

作　　者：叶中郎[1] 朱泽华[1] 谢兆军[1] 

机构地区：[1]西南石油大学材料科学与工程院,四川成都610500

出　　处：《电子元件与材料》2010年第8期66-69,共4页Electronic Components And Materials

摘　　要：介绍了晶界层材料的储能优势,分析了晶界层材料的储能原理。综述了BaTiO3和CaCu3Ti4O12等晶界层电容器材料的研究现状,并对晶界层储能电容所需的高介电常数和高击穿电压,以及实现这一性能须采取的改性包覆等措施进行了总结与展望。The advantage in energy storage of boundary-layer materials is introduced and the principle of energy storage of boundary-layer materials is analyzed.The present situation of energy storage boundary-layer capacitor materials such as BaTiO3 and CaCu3Ti4O12(CCTO) etc.are reviewed.The high permittivity and high breakdown voltage which need for energy storage boundary-layer capacitor,and the measures to achieve this performance including doping and cladding are summarized and prospected.

关 键 词：储能电容 晶界层材料 综述 掺杂 包覆 

分 类 号：TM282[一般工业技术—材料科学与工程]