SiO_2掺杂低温烧结PMMNS压电陶瓷的结构和性能  

Structures and properties of low temperature sintering SiO_2-doped PMMNS piezoelectric ceramics

作　　者：常鹏[1] 刘彭义[1] 祝兰[1] 

机构地区：[1]暨南大学物理系,广东广州510632

出　　处：《电子元件与材料》2010年第8期14-17,共4页Electronic Components And Materials

基　　金：广州市科技计划基金资助项目(No2008Z1-D411)

摘　　要：采用固相二步合成法制备SiO2掺杂Pb(Mg1/3Nb2/3)0.05(Mn1/3Nb2/3)0.04(Mn1/3Sb2/3)0.01Zr0.45Ti0.45O3(PMMNS)压电陶瓷,探讨了不同SiO2掺杂量对陶瓷样品的相结构和机电性能的影响。结果表明:在烧结温度为980℃时,可以得到纯钙钛矿结构PMMNS陶瓷。SiO2的加入,明显降低了PMMNS陶瓷的烧结温度。当SiO2的掺杂量为质量分数0.10%时,所得性能最佳:kp=0.51,d33=323pC/N,Qm=1475,tanδ=0.0038和εr=1762。Pb(Mg1/3Nb2/3)0.05(Mn1/3Nb2/3)0.04(Mn1/3Sb2/3)0.01Zr0.45Ti0.45O3(PMMNS) piezoelectric ceramics doped SiO2 were prepared using two-step solid phase synthesis method.The influence of SiO2 doped amount on crystallographic phase and electromechanical properties were investigated.The results show that sintering temperature of the PMMNS ceramics is decreased obviously with the addition of mass content of SiO2.The pure perovskite structure is obtained at sintering temperature of 980 ℃.When mass fraction of SiO2 is...

关 键 词：压电陶瓷 PMMNS 低温烧结 机电性能 

分 类 号：TM282[一般工业技术—材料科学与工程]