Reliability of Au/PZT/BIT/p-Si ferroelectric diode  

作　　者：王华 于军 董小敏 周文利 王耘波 颜冲 周东祥 

机构地区：[1]Department of Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China [2]Department of Electron and Information,Guilin institute of Electronic Technology,Guilin 541004,China

出　　处：《Science China(Technological Sciences)》2002年第2期160-165,共6页中国科学（技术科学英文版）

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 69771024) and the Natural Science Foundation of Hubei Province (Grant No. 98J036) .

摘　　要：A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I–V characteristics, capacitance retention, fatigue and imprint) were investigated. The I–V curve showed the conventional Schottky diode characteristics with a small current density of ?5.3×10?10 A/cm2 at a voltage of ?4 V and 6.7×10?8 A/cm2 at a voltage of +4 V, and this characteristic can be maintained below 50°C. The capacitance variety of the ferroelectric diode was only 5% in 10 hours after withdrawing the applied bias of +5 V or ?5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was observed, but the figure of merit FOM was about 0.2 and the diode had no imprint invalidation.

关 键 词：FERROELECTRIC momeries ferroelectric diode I-V characteristics fatigue imprint. 

分 类 号：TN31[电子电信—物理电子学]