Synthesis and surface reactivity of phosphide nanocrystals  

作　　者：潘教青 崔得良 蒋民华 黄柏标 周海龙 

出　　处：《Science China Mathematics》2002年第5期661-665,共5页中国科学：数学（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 59823003).

摘　　要：Gap and InP nanocrystals were synthesized from Na3P and GaCI3 at low temperature (80–100°C) and atmospheric pressure. The samples were characterized by XRD and TEM measurements. The surface reactivity of Gap nanocrystals was studied by heating in N2. The weight of the nanocrystals increased at the temperature between 370°C and 480°C. It can be concluded that N, molecule was absorbed and reactivated on the surface of Gap nanocrystals. Keywords: gallium phosphide, indium phosphide, nanocrystal, surface reactivity.GaP and InP nanocrystals were synthesized from Na3P and GaCl3 at low temperature (80-100℃) and atmospheric pressure. The samples were characterized by XRD and TEM measurements. The surface reactivity of GaP nanocrystals was studied by heating in N2. The weight of the nanocrystals increased at the temperature between 370℃ and 480℃. It can be concluded that N2 molecule was absorbed and reactivated on the surface of GaP nanocrystals.

关 键 词：GALLIUM phosphide  INDIUM phosphide  nanocrystal  surface reactivity. 

分 类 号：O484.1[理学—固体物理]