Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode  

作　　者：王华 于军 董晓敏 周文利 王耘波 郑远开 赵建宏 

出　　处：《Science China(Technological Sciences)》2001年第3期274-279,共6页中国科学（技术科学英文版）

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 69771024) ; the Natural Science Foundation of Hebei Province (Grant No. 98J026) .

摘　　要：A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop withP t=15 μC/cm2 andE c=48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12%. The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7×10?8 A/cm2 at a voltage of +4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic “1” and logic “0” at a read voltage of +2V, and the stored logical value (“1” or “0”) could be read out in 30 min.

关 键 词：ferroeletric films memory diode Pb(Zr0.52Ti0.48)O3 BI4TI3O12 

分 类 号：TN312[电子电信—物理电子学]