The Structure and I-V Property of a-C:F Thin Film  

作　　者：黄峰 康健 叶超 杨慎东 程珊华 宁兆元 

出　　处：《Plasma Science and Technology》2001年第5期947-952,共6页等离子体科学和技术（英文版）

摘　　要：Fluorinated amorphous carbon (a-C:F) thin film has been deposited by microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C6H6 and CHF3 as source gases. The result of x-ray photoelectron spectroscopy (XPS) shows that the main bonds in the film as-deposited are C-C, C-F and CF2. The measurement of postive I-V property indicates that the conductance of the film presents Omic characteristic at a lower electric field ,and follows Schotty emission at a higher electric field.Fluorinated amorphous carbon (a-C:F) thin film has been deposited by microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C6H6 and CHF3 as source gases. The result of x-ray photoelectron spectroscopy (XPS) shows that the main bonds in the film as-deposited are C-C, C-F and CF2. The measurement of postive I-V property indicates that the conductance of the film presents Omic characteristic at a lower electric field ,and follows Schotty emission at a higher electric field.

关 键 词：The Structure and I-V Property of a-C CHF CF 

分 类 号：O484.1[理学—固体物理] O484.4[理学—物理]