Effects of oxygen pressure on La_3Ga_5SiO_(14) thin films grown by pulsed laser deposition  

作　　者：张雯 王继扬 季振国 李红霞 娄垚 姚淑华 

机构地区：[1]State Key Laboratory of Crystal Materials,Shandong University [2]Institute of Electronic Information,Hangzhou Dianzi University [3]The MOE Key Laboratory of the Mechanical Manufacture and Automation,Zhejiang University of Technology

出　　处：《Journal of Rare Earths》2010年第3期420-423,共4页稀土学报（英文版）

基　　金：supported by the opening project of the MOE Key Laboratory of Mechanical Manufacture and Automation of Zhejiang University of Technology (AMT200506-005)

摘　　要：La3Ga5SiO14 thin films were grown on Si(100) substrates by pulsed laser deposition at several oxygen pressures(5,10,and 20 Pa).The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the(300) and(220) planes increased as the oxygen pressure was increased to 20 Pa.The deposited films ...La3Ga5SiO14 thin films were grown on Si(100) substrates by pulsed laser deposition at several oxygen pressures(5,10,and 20 Pa).The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the(300) and(220) planes increased as the oxygen pressure was increased to 20 Pa.The deposited films ...

关 键 词：thin films pulsed laser deposition crystal structure SURFACES rare earths 

分 类 号：TB383.2[一般工业技术—材料科学与工程]