添加Na^+对ANT系统介电性能的影响  

Effect of Na^+ on Dielectric Properties of ANT System

作　　者：李玲霞[1] 郭炜[1] 吴霞宛[1] 王洪儒[1] 张志萍[1] 余昊明[1] 

机构地区：[1]天津大学电子信息学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《无机材料学报》2004年第4期823-826,共4页Journal of Inorganic Materials

基　　金：国家自然科学基金(50172035)

摘　　要：Ag2O-Nb2O5-Ta2O5陶瓷系统(简称ANT)是一种新型的高频高介陶瓷材料,可以在1150℃以下进行中温烧结。在本系统中,添加Na+离子置换ANT系统中的A位A+离子形成ANNT系统,通过XRD,SEM以及能谱分析发现,少量Na+添加,导致晶格参数下降,即八面体空隙的体积将减小,从而抑制了Nb5+的松弛极化,有效地降低了ANT系统的损耗因子,使系统的介电性能达到:ε>500,tg δ≤5×10-4,容量温度系数αc=+12ppm/℃,ρv>1012Ωcm。The Ag2O-Nb2O5-Ta2O5 (ANT) system is a novel high frequency high permittivity ceramic material which can be sintered below 1150degreesC. The doping of Na+ can replace A site ions (Ag+) in ANT to form ANNT system. In this paper proper Na+ ions were introduced into ANT system. XRD, SEM, and energy spectrum analysis show that proper Na+ addition makes the lattice parameter reduced, i.e. the capacity of octahedron reduced, the dielectric dissipation factor of the system is improved efficiently because of depression of relaxation polarization of Nb5+, and the dielectric properties of the system are as follows: epsilon > 500, tgdelta less than or equal to 5 X 10(-4), alpha(c) = +12ppm/degreesC, rho(v) > 10(12)Omega(.)cm.

关 键 词：高频高介 ANT 松弛极化 介电损耗 

分 类 号：TQ174[化学工程—陶瓷工业]