Cu掺杂Ga_2O_3薄膜的光学性能  

Optical Properties of Cu-doped Ga_2O_3 Thin Films

作　　者：闫金良 赵银女[2] 

机构地区：[1]鲁东大学物理学院,山东烟台264025 [2]鲁东大学教务处,山东烟台264025

出　　处：《光子学报》2012年第6期704-707,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(No.10974077);山东省自然科学基金(No.2009ZRB01702);山东省高等学校科技计划(No.J10LA08)资助

摘　　要：采用射频磁控溅射和N2气氛退火处理制备了多晶Ga2O3薄膜和Cu掺杂Ga2O3薄膜.用X射线衍射仪、紫外-可见分光光度计、荧光光谱仪对Ga2O3薄膜和Cu掺杂Ga2O3薄膜的结构和光学性能进行了表征.结果表明,Cu掺杂后Ga2O3薄膜的结晶质量变差,透过率明显降低,吸收率增加,光学带隙减小.本征Ga2O3薄膜在紫外、蓝光和绿光出现了发光带,Cu掺杂后紫外和蓝光发射增强,且在475nm处出现了一个新的发光峰.Polycrystalline Ga2O3 and Cu-doped Ga2O3 thin films are prepared by RF magnetron sputtering and N2 ambient annealing.The X-ray diffractometer,UV-VIS spectrophotometer,fluorescent spectrometer are used to characterize and analyze the structural and optical properties.The experimental results show that the crystal quality deteriorates,the transmittance decreases,the absorption increases,and the effective optical band gap shrinks for Ga2O3 films with Cu impurity doping.The UV,blue and green characteristic emission bands of intrinsic Ga2O3 films are observed.The UV and blue emission are enhanced by Cu-doping and a new emission peak centred at 475 nm appears for the Cu-doped Ga2O3 films.

关 键 词：氧化镓薄膜 透射光谱 光学带隙 光致发光 

分 类 号：O484.4[理学—固体物理] O472+.3[理学—物理]