三毫米波段四次谐波混频器的研究  

Research on 3mm Fourth Sub-harmonic Mixer

作　　者：向博[1] 窦文斌[1] 何敏敏[1] 

机构地区：[1]东南大学毫米波重点实验室,南京210096

出　　处：《空间电子技术》2012年第2期54-57,共4页Space Electronic Technology

摘　　要：文章采用微带结构研制出三毫米波四次谐波混频器。该混频器核心器件采用型号为MS8251-P261的GaAs梁式引线肖特基势垒二极管对。先用谐波平衡法分析出反向并联二极管对在本振信号单独激励下的大信号阻抗,并由此设计出本振网络;然后模拟出该器件在大信号本振激励下的小信号射频输入阻抗,并由此设计出射频网络。整个电路设计和安装在介电常数为2.22、厚度为0.127mm的RT/Duriod 5880基片上。当本振频率为23.15GHz时,该混频器射频输入88GHz～94.4GHz,实测带内变频损耗小于20dB。A fourth sub-harmonic mixer is designed with micro-strip at 3mm wave length.The key device of the mixer is a pair of GaAs beam lead anti-parallel Schottky diode(type MS8251-P261).The large signal impedance of anti-parallel diode pair,which is stimulated with the LO signal excited alone,is simulated by harmonic balance method firstly.The LO network is designed based on the above result.Then the small signal impedance of anti-parallel diode pair with LO stimulation is simulated and the RF network is designed..The fourth sub-harmonic mixer is fabricated on the RT/Duroid 5880 with 0.127mm thick and dielectric constantεr of 2.22.According to the measurement result,The conversion loss which is lower than 20dB is achieved with the RF ranged from 88GHz to 94.4 GHz and the LO frequency of 23.15 GHz.

关 键 词：三毫米波 四次谐波混频器 变频损耗 肖特基势垒二极管对 

分 类 号：TN7[电子电信—电路与系统]