Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates  

作　　者：Zhao, Xuelian  Jiang, Dan  Yu, Shengwen  Cheng, Jinrong 

机构地区：[1] School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

出　　处：《Rare Metals》2012年第3期272-275,共4页稀有金属（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 50872080);Shanghai Special Foundation of Nanotechnology (No. 1052nm07300);Shanghai Education Development Foundation (No. 08SG41);Shanghai Leading Academic Disciplines (No. S30107)

摘　　要：PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.

关 键 词：PT seed layer LNO PZT ferroelectric thin films 

分 类 号：TG1[金属学及工艺—金属学]