Y_2O_3掺杂对BaZr_xTi_(1-x)O_3陶瓷介电性能的影响  

Influence of Y_2O_3 dopant on dielectric properties of BaZr_xTi_(1-x)O_3 ceramics

作　　者：黄丽丽[1] 陈威[1] 曹万强[1] 

机构地区：[1]湖北大学材料科学与工程学院,湖北武汉430062

出　　处：《湖北大学学报（自然科学版）》2012年第1期45-47,51,共3页Journal of Hubei University：Natural Science

基　　金：功能材料绿色制备与应用教育部重点实验室和湖北省自然科学基金(2009CDB027)资助

摘　　要：研究BaZrxTi1-xO3(x=0,0.1,0.2,0.3)陶瓷中掺杂0.1%(按物质的量计算,下同)Y2O3对铁电-顺电相变温度的影响.发现0.1%Y2O3的掺杂使BaTiO3的铁电-顺电相变的居里温度向高温偏移了约20℃,不同Zr含量的样品也发生了一定程度的高温偏移.在-40℃到140℃的测量温度范围内介电频率弥散现象极弱,峰值介电常数可以达到8 000,损耗峰值为0.05以下.随Zr含量的增加,损耗峰快速移向低温.与文献报道的结果比较,证实Y以A位替代Ba为主.Influences of 0.1%Y2O3 dopant on dielectric properties of BaZrxTi1-xO3(x=0,0.1,0.2,0.3) ceramics were investigated.The curie temperature of 0.1%Y2O3 doped BaTiO3 ceramics was about 20 ℃ higher than that of pure BaTiO3.The curie temperatures of 0.1% Y2O3-BaZrxTi1-xO3(x=0,0.1,0.2,0.3) ceramics were also increased in some extent.In the measuring temperature region of-40 ℃ to 140 ℃,the peaks of dielectric permittivity of the ceramics kept high value of 8 000 with the low frequency dispersion,and the peaks of dielectric loss was less than 0.05.With the increase of Zr content,the peaks of dielectric loss moved to low temperature quickly.Comparing with the reported result,it was confirmed that Y ions was mainly occupied A-site to substitute Ba ions.

关 键 词：BaZrxTi1-xO3铁电陶瓷 介电常数 居里温度 

分 类 号：TM22+3[一般工业技术—材料科学与工程]