GaN高电子迁移率晶体管高频噪声特性的研究  

Research on High Frequency Noise Characters of GaN HEMTs

作　　者：陈勇波[1] 周建军[2] 徐跃杭[1] 国云川[1] 徐锐敏[1] 

机构地区：[1]电子科技大学电子工程学院,成都611731 [2]南京电子器件研究所单片集成电路和模块国家级重点实验室,南京210016

出　　处：《微波学报》2011年第6期84-88,共5页Journal of Microwaves

基　　金：国家自然科学基金(60876052);中央高校基本科研业务基金(103.1.2E0220502051)

摘　　要：基于FUKUI噪声模型,分析了GaN高电子迁移率晶体管(HEMT)器件的高频噪声特性,结果表明,由于GaN HEMT具有更高的临界电场和更大的电子饱和速度,与第2代半导体器件(GaAs HEMT等)相比具有更优越的噪声性能。对近10多年来国内外在GaN HEMT低噪声器件及其低噪声功率放大器单片集成电路(MMIC)方面的研究进行了综述,并分析了GaN HEMT在低噪声应用领域目前存在的主要问题及其发展趋势。In this paper,the high frequency noise characters of GaN High Electron Mobility Transistors(HEMTs) were studied.It was proved theoretically,based on FUKUI noise model,that the high frequency noise characters of GaN HEMTs were better than the ones of the second-generation semiconductor devices because of its higher critical electrical field and faster saturated electron velocity.Then,state-of-the-art of GaN HEMTs low noise devices and their Monolithic Microwave Integrated Circuit(MMIC) were introduced and summarized.

关 键 词：氮化镓(GaN) 高电子迁移率晶体管(HEMT) 高频噪声 低噪声放大器 

分 类 号：TN32[电子电信—物理电子学]