Zn掺杂β-Ga_2O_3薄膜的制备和特性研究(英文)  

Preparation and Properties of Zn-doped β-Ga_2O_3 Films

作　　者：赵银女[1] 

机构地区：[1]鲁东大学教务处,山东烟台264025

出　　处：《光子学报》2012年第10期1242-1246,共5页Acta Photonica Sinica

基　　金：The National Natural Science Foundation of China(No.10974077);Natural Science Foundation of Shandong Province,China(No.2009ZRB01702);Shandong Province Higher Educational Science and Technology Program(No.J10LA08)

摘　　要：β-Ga2O3是一种宽带隙半导体材料,能带宽度Eg≈5.0eV,在光学和光电子学领域有广泛的应用.用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜,用紫外-可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响.退火后的β-Ga2O3薄膜为多晶结构,与本征β-Ga2O3薄膜相比,Zn掺杂β-Ga2O3薄膜的β-Ga2O3(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°.退火后的Zn掺杂β-Ga2O3薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强.表明退火后Zn掺杂β-Ga2O3薄膜中的Zn原子被激活充当受主.β-Ga2O3 is a wide band gap semiconductor with a band gap of Eg≈5.0 eV,which has potential optical and optoelectronic applications. The intrinsic β-Ga2O3 and Zn-doped β-Ga2O3 films were prepared on Si (111) and UV transparent quartz substrates using RF magnetron sputtering.The optical transmission,optical absorption,structural property,photoluminescence were measured using a double beam spectrophotometer, X-ray diffractometer, fluorescence spectrometer.The effects of the Zn doping and thermal annealing on the structural and optical properties were investigated.The post-annealed β-Ga2O3 films are polycrystalline.In comparison with the intrinsic β-Ga2O3 films,the intensity of the Zn-doped β-Ga2O3 (111) peak becomes weak,the crystallization deteriorates,the (111) peak position shifts from 35.69° to 35.66°.For the post-annealed Zn-doped β-Ga2O3 films,the optical band gap shrinks,the transmittance decreases,the absorption increases,the near-edge absorption appears,and the UV,blue,green emission bands are enhanced.It means that the doped Zn atoms are activated effectively after annealing and act as acceptors.

关 键 词：Zn掺杂β-Ga2O3 光学透过 光学带隙 光致发光 

分 类 号：O484.4[理学—固体物理] O472.3[理学—物理]