紫光对多晶掺锰铁酸铋薄膜铁电和电输运性质的影响  

Effect of purple light on ferroelectricity and electric transport process of polycrystalline Mn-doped BiFeO_3 film

作　　者：杜明辉 姜庆华[2] 彭增伟[3] 刘保亭[3] 

机构地区：[1]石家庄铁道大学数理系,河北石家庄050043 [2]唐山工业职业技术学院机械工程系,河北唐山063020 [3]河北大学物理科学与技术学院,河北保定071002

出　　处：《功能材料》2012年第12期1545-1547,1552,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60876055;11074063)

摘　　要：采用溶胶-凝胶的方法在Pt(111)/Ti/SiO2/Si(001)基片上制备了5%Mn掺杂的BiFeO3(BFMO)薄膜,并构建了Pt/BFMO/Pt对称型电容器,研究了紫光对多晶BFMO薄膜铁电性及J-V特性的影响。实验发现,在紫光的照射下,薄膜的电导增大,这是由于紫光入射在BFMO薄膜上,产生了光生载流子。当外加电压为5V时,漏电流密度由9.1mA/cm2增大到16.3mA/cm2。Pt和BFMO的接触满足金属-半导体理论中的欧姆接触,并且光的存在并没有改变Pt/BF-MO/Pt电容器的漏电流机制。当光入射到薄膜表面,样品的剩余极化强度增大,由无光时的91.7μC/cm2增大到光照时的99.9μC/cm2。5% Mn-doped BiFeO3(BFMO) film had been deposited on Pt(111)/Ti/ SiO2/Si(001) substrate by sol-gel method,and a capacitor with a structure of Pt/BFMO/Pt was constructed.Effect of purple light on ferroelectric and J-V properties were surveyed.Conductance of BFMO film increases when illuminated with purple light,which is accounted for the existence of photo-induced carries due to illumination.The leakage current density alters from 9.1mA/cm2 to 16.3 mA/cm2 at 5V.Analysis of dark current density suggests that Ohmic conduction behavior is the dominated leakage mechanism and illumination do not change the conductive mechanism.Additionally,hysteresis loop changed under illumination of purple light,and illumination enhances the remanent polarization of BFMO film,from 91.7μC/cm2 in dark to 99.9μC/cm2 in light.

关 键 词：掺锰铁酸铋 光 漏电流 电滞回线 

分 类 号：O484.42[理学—固体物理]