电场调谐InAs量子点激子精细结构劈裂  

Electric Field Tuning Exciton Fine Structure Splitting of InAs Single Quantum Dots

作　　者：李文生[1] 孙宝权[2] 

机构地区：[1]通辽职业学院化工学院,内蒙古通辽028000 [2]中国科学院半导体研究所超晶格国家重点实验室,北京100083

出　　处：《内蒙古大学学报（自然科学版）》2012年第6期606-610,共5页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(No.11074246)

摘　　要：在低温5K下,采用光致发光光谱及外加偏压调谐InAs量子点激子精细结构劈裂,研究了不同量子点激子的精细结构劈裂值大小,以及垂直电场有效地调谐激子的精细结构劈裂.对于具有较小精细结构劈裂的量子点样品,外加偏压可以使其精细结构劈裂值减小到小于激子的本征光谱宽度,从而实现基于单双激子纠缠态的制备.The fine structure splitting(FSS) of the excitons for different InAs quantum dots(QDs) have been studied by using photoluminescence(PL) and applied vertically bias voltage at low temperature of 5 K.It is found that FSS of the excitons is effectively tuned via applied bias voltage.For the QDs with a small value of the FSS,by applied bias voltage FSS can be reduced down to a value of the intrinsic linewidth of the exciton emission,leading to a fabrication of entangled states based on excitons and biexcitons.

关 键 词：单双激子 激子精细结构劈裂 电场调谐 

分 类 号：O431.2[机械工程—光学工程]