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机构地区:[1]中北大学电子测试技术国家重点实验室,山西太原030051
出 处:《中北大学学报(自然科学版)》2012年第5期595-597,共3页Journal of North University of China(Natural Science Edition)
基 金:国家863重大资助项目(2006AA040601)
摘 要:以三水合乙酸铅、四正丁氧基锆和钛酸四丁酯为原料,并以乙酰丙酮为熬合剂,乙二醇甲醚为溶剂制备PZT溶胶;在Si-Pt基板上采用溶胶-凝胶法制备热释电薄膜.采用KW-4A型匀胶机,甩胶速度为4 500r/m,甩胶30s,在马弗炉中烧结温度为400℃,退火温度分别为600℃,650℃,700℃.使用AFM观察表面形貌,在拉曼光谱仪下观测拉曼峰.试验结果表明:在600℃,650℃,700℃退火时均形成拉曼峰,650℃退火时局部区域内薄膜材料的表面光滑而致密,700℃形成了三方、四方共存的钙钛矿相结构.By taking lead acetate,zirconium tetra-n-butoxide,tetraburyl titanate as raw materials,acetylacetone as chelating agent,and ethylene glycol monomethyl ether(EM) as solvent,the PZT was prepared.Sol PZT pyroelectric film in the Si-Pt substrate in the way of Sol-Gel was prepared by using spin coater(KW-4A)with rotation speed of 4 500 r/m and rotating time of 30 s.The PZT Sol was treated in the muffle with sintering temperature of 400 ℃ and annealing temperature of 600 ℃,650 ℃,and 700 ℃,respectively.AFM and Raman spectrum were used to investigate the morphology and the Raman peaks.The experiment showed that the Raman peaks were found when the material was treated at annealing temperatures of 600 ℃,650 ℃ and 700 ℃.The surface of the film was smooth and dense at the annealing temperature 650 ℃.The perovskite type structure of tetragonal and trigonal concomitant were formed at the annealing temperature 700 ℃.
分 类 号:TN304.055[电子电信—物理电子学]
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