SiC和Si_3N_4粉体的太赫兹时域光谱研究  

Terahertz Time-Domain Spectroscopy of SiC and Si_3N_4 Powders

作　　者：韩建龙[1] 邱桂花[1] 张瑞蓉[1] 潘士兵[1] 黄成亮[1] 于名讯[1] 

机构地区：[1]中国兵器工业集团第五三研究所,山东济南250031

出　　处：《中国粉体技术》2013年第3期62-65,共4页China Powder Science and Technology

摘　　要：采用太赫兹时域光谱装置测试SiC和Si3N4粉体在0.4～2.4 THz的透射光谱,研究SiC和Si3N4粉体对太赫兹波的吸收性能与其电导率的关系,分析SiC和Si3N4粉体对太赫兹波的散射特性。结果表明,SiC是一种半导体材料,其内部含有较多可以自由移动的载流子,对太赫兹波的吸收较强;Si3N4是绝缘性很好的材料,对太赫兹波的吸收很小;SiC和Si3N4粉体对太赫兹波的散射作用属于瑞利散射,但是测试波长比粉体粒径大得多,散射效果不明显。Transmission spectra of SiC and Si3N4powders in 0.4~2.4 THz were measured using terahertz time-domain spectroscopy.The relationship between the terahertz waves absorption performance and the conductivity of SiC and Si3N4 powders was studied.The terahertz waves scattering characteristics of SiC and Si3N4 powders were analyzed.The results indicate that the terahertz waves absorption performance of SiC powders is higher than that of Si3N4powders,because SiC is a kind of semiconductor materials in which there are much more free carriers than Si3N4.The terahertz waves scattering of SiC and Si3N4 powders belongs to Rayleigh scattering.But the scattering effect is not obvious because of the big gap between the wavelength of terahertz waves and the particle sizes of SiC and Si3N4powders.

关 键 词：太赫兹波 太赫兹时域光谱 吸收 电导率 散射 

分 类 号：O436.2[机械工程—光学工程]