In_xGa_(1-x)N量子阱蓝光LED光电特性与量子阱束缚态能级的关系  

Relationship Between In_xGa_(1-x)N Quantum-well Blue LED's Photoelectric Properties and Quantum Well Bound State Energy Level

作　　者：李国斌[1] 陈常水 刘颂豪[1] 

机构地区：[1]华南师范大学广东省微纳光子功能材料与器件重点实验室激光生命科学教育部重点实验室,广东广州510631

出　　处：《发光学报》2013年第7期911-917,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60878063);广东省自然科学基金(10251063101000001;8251063101000006)资助项目

摘　　要：运用软件模拟和理论计算的方法分析了量子阱宽度的变化对量子阱束缚态能级与光电性能产生的影响,建立了束缚态分裂能级理论模型。分析结果表明:当量子阱宽较窄时,极化效应导致的能带弯曲是光谱红移的主要原因,而电子泄漏是导致效率下降的主要原因;当阱宽较大时,能级填充是导致光谱红移的主要原因,俄歇复合与载流子离域是导致效率下降的主要原因。由本文得出,当量子阱宽为2.5～3.5 nm时,InGaN/GaN发光二极管获得最大内量子效率与发光效率。The software simulation and theoretical calculations are used to analysis the relationship between InxGa1-xN quantum well blue LED’s photoelectric properties and quantum well bound state energy level.A bound state split level model is established.When the quantum well thickness is narrower,the band bending caused by the polarization effects is the main reason for the spectral red-shift,and electron leakage is the main reason for efficiency droop.But as the well width increase,level filling is the main reason for the red-shift of spectrum,Auger recombination and carrier delocalization are the main reason for lower efficiency.By this article,the optimization quantum well width for InGaN/GaN light-emitting diodes can be obtained.The maximum internal quantum efficiency and luminous efficiency can be obtained when the optimization quantum well width is 2.5~3.5 nm.

关 键 词：量子阱宽 效率下降 数值模拟 InGaN/GaN发光二极管 

分 类 号：O482.31[理学—固体物理]