具有电流阻挡层的不同GaN基LED的光电特性(英文)  

Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer

作　　者：郭伟玲[1] 俞鑫[1] 刘建朋[1] 樊星[1] 白俊雪[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100124

出　　处：《发光学报》2013年第7期918-923,共6页Chinese Journal of Luminescence

基　　金：国家科技支撑计划(2011BAE01B14)资助项目

摘　　要：研究对比了InGaN/GaN多量子阱发光二极管中p电极下的不同SiO2电流阻挡层的光电特性。6种样品被分为3组:普通表面、表面粗化、表面粗化+边墙腐蚀。每组都有两种结构,一种具有电流阻挡层,另一种没有电流阻挡层。每组中,具有电流阻挡层的LED在20 mA下的正向电压分别为3.156,3.282,3.284 V,略高于不含电流阻挡层的样品(Vf=3.105,3.205,3.210 V).但是,具有电流阻挡层的LED的光效和光功率要优于无电流阻挡层的器件,在20 mA下的光功率分别提高了10.20%、12.19%和11.49%。这些性能的提升都要归功于电流阻挡层良好的电流扩展效应,同时电流阻挡层还可以减小p电极下的寄生光吸收。InGaN/GaN multiple-quantum well(MQW) light-emitting diodes(LEDs) were fabricated,in which a SiO2 current blocking layer(CBL) was inserted underneath the p-pad electrode.Samples were divided into three groups: normal surface,surface roughing,and surface roughing plus side wall etching.Each group had two different structure devices: with and without CBL.In each group,the voltage Vf at 20 mA for the LEDs with a CBL(Vf=3.156,3.282,3.284 V) were slightly higher than those of without CBL(Vf=3.105,3.205,3.210 V).However,the luminous efficiency and the light-output power of the LEDs with CBL were better than those without CBL.At 20 mA current,the output power of the LEDs with a CBL increase 10.20%,12.19%,11.49% compared with those without CBL.It is due to the current spreading effect in CBL devices.The CBL can also reduce parasitic optical absorption in the p-pad electrode.

关 键 词：LED 电流阻挡层 光功率 光效 

分 类 号：O482.31[理学—固体物理]