LD泵浦被动调Q-Yb^(3+)∶YAG微晶片激光器的优化设计  

Design and Optimization of LD-pumped Passively Q-switched Yb^(3+)∶YAG Microchip Laser

作　　者：刘宗华[1] 郑义[1] 

机构地区：[1]北京交通大学理学院,北京100044

出　　处：《发光学报》2013年第9期1219-1226,共8页Chinese Journal of Luminescence

摘　　要：从速率方程出发,理论分析了泵浦功率、输出镜反射率、Cr4+∶YAG的初始透过率和长度、Yb3+∶YAG的长度对调Q激光器的重复频率、脉冲宽度、平均输出功率、峰值功率、输出脉冲能量和单脉冲能量利用率的影响。依据理论结果设计了一个窄脉冲宽度、高峰值功率和脉冲能量的被动调Q-Yb3+∶YAG微晶片激光器。该激光器的脉冲宽度Δt=199 ps,峰值功率P m=1.04 MW,输出脉冲能量E=0.21 mJ。Based on rate equations,effects of laser parameters,including the pumped power,the reflectance of output mirror,the initial transmittance and the length of Cr4 +∶ YAG,and the length of Yb3 +∶ YAG on the laser performance were analyzed theoretically.Then based on theoretical conclusions,we designed a LD-pumped and passively Q-switched Yb3 +∶ YAG microchip laser with narrow pulse width,high peak power and large pulse energy.The pulse width was 199 ps,the peak power was 1.04 MW,and the pulse energy was 0.21 mJ.

关 键 词：微晶片激光器 被动Q调制 Yb3+∶YAG Cr4+∶YAG 速率方程 

分 类 号：O482.31[理学—固体物理]