富硅a-SiO_xN_y∶H薄膜的电致发光特性  

Electroluminescence Characteristics of Si-rich a-SiO_xN_y∶H Flims

作　　者：林泽文[1] 林圳旭 宋超[2] 张毅 王祥[2] 郭艳青[2] 宋捷[2] 黄新堂[1] 黄锐 

机构地区：[1]华中师范大学物理科学与技术学院,湖北武汉430079 [2]韩山师范学院物理与电子工程系,广东潮州521041

出　　处：《发光学报》2013年第11期1479-1482,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61274140);广东省自然科学基金(S2011010001853);广东高校科技创新项目(2012KJCX0075);广东高校育苗基金(LYM11090)资助项目

摘　　要：采用甚高频等离子体增强化学气相沉积方法制备富硅氮氧化硅(a-SiO0.35N0.59∶H)薄膜,以这层薄膜作为有源层构建发光二极管。实验结果表明器件在室温下可观测到强的电致红光发射,发光峰在715 nm附近,与其光致发光峰位一致。电致发光谱测量还表明器件开启电压为8 V,器件的电致发光强度随注入电流的增大呈线性递增关系。电流-电压特性分析表明器件的载流子输运机制以Pool-Frenkel(P-F)发射模型为主。结合发光有源层的微结构分析,初步认为电致红光发射来自于电子和空穴通过有源层的带尾态的辐射复合。a-SiO0. 35N0. 59∶ H films were fabricated by very high frequency plasma enhanced chemical vapor deposition method and used as the active layers in the light-emitting diodes. Strong red electroluminescence( EL) from the diode can be clearly observed at room temperature. The EL from the diode is peaked at around 715 nm,very similar to that of the PL spectra. The turn-on voltage for the device is 8 V. It is also found that there is a linear relationship between the integrated EL intensity and the injected current. In addition,the I-V characteristics indicates that the Pool-Frenkel( PF) emission behavior is dominant in the carrier transport process in the diode. Combining with the microstructure analysis for the luminescent active layer,the red electroluminescence is tentatively suggested from the recombination of electron-hole pairs at band tail states of a-SiO0. 35N0. 59∶ H layer.

关 键 词：氮氧化硅薄膜 红光 电致发光 

分 类 号：O484.41[理学—固体物理]