基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征  

Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)

作　　者：熊贤风[1,2] 元淼 林广庆[1,2] 王向华[1] 吕国强[1] 

机构地区：[1]特种显示技术教育部重点实验室特种显示技术国家工程实验室,现代显示技术省部共建国家重点实验室培育基地,合肥工业大学光电技术研究院,安徽合肥230009 [2]合肥工业大学仪器科学与光电工程学院,安徽合肥230009 [3]合肥工业大学电子科学与应用物理学院

出　　处：《发光学报》2014年第1期105-112,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(21174036,51103034,51203039);“973”计划前研专项(2012CB723406)资助项目

摘　　要：采用旋涂法预先在SiO2衬底表面形成一层聚(4-乙烯基苯酚)(PVP)作为表面修饰层,以喷墨打印的6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS并五苯)作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管(OTFT)器件。作为对比,在未经过表面修饰的SiO2衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO2衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm2·V-1·s-1;而直接在SiO2衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm2·V-1·s-1。Organic thin-film transistors (OTFTs) were prepared with inkjet-printed 6, 13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the active semiconducting layer. Poly(4-vinylphenol) (PVP) was spin-coated on the surface of SiO2 substrates as the surface modification layer to improve film morphology of the semiconductor. The source and drain electrodes were thermally eva-porated through a metal mask to complete the OTFTs with a bottom-gate top-contact (BGTC) structure. Compared with the TIPS-pentacene films inkjet-printed on the controlled SiO2 substrate without PVP modification layer, the single-drop semiconductor films deposited on the PVP-modified substrate show much reduced coffee-ring effect and therefore better film uniformity, while large-area films with rectangular pattern printed with overlapping multi-drop shows larger grain size and the corresponding OTFTs also exhibits enhanced field-effect mobility. The average field-effect mobility of the inkjet-printed film on the PVP-modified substrate was as high as 0.065 cm2·V-1·s-1, while the average field-effect mobility of the semiconductor directly printed on the SiO2 substrate was merely 0.02 cm2·V-1·s-1.

关 键 词：有机半导体 有机薄膜晶体管 喷墨打印 表面修饰 绝缘聚合物 

分 类 号：O484.4[理学—固体物理] TN383+.1[理学—物理]