Ag/ZnO纳米结构的荧光增强效应  

Photoluminescence Enhancement from Ag/ZnO Nanostructures

作　　者：徐天宁[1,2] 李佳[1] 李翔[1] 隋成华[1] 吴惠桢[2] 

机构地区：[1]浙江工业大学之江学院理学系,浙江杭州310024 [2]浙江大学物理系硅材料国家重点实验室

出　　处：《发光学报》2014年第4期404-408,共5页Chinese Journal of Luminescence

基　　金：浙江省自然科学基金(Y1110549);浙江省教育厅科研项目(Y200803369)资助

摘　　要：利用化学合成方法制备了Ag纳米线和ZnO量子点。对这两种纳米结构的表面形貌、晶体结构和光学性质分别进行了研究。结果表明:Ag纳米线和ZnO量子点均为单晶结构,平均直径分别为160 nm和5 nm左右。将Ag纳米线混入ZnO量子点可以使其紫外荧光显著增强,其中位于345 nm和383 nm的荧光分别增强30倍和12倍。这与Ag纳米线和ZnO量子点混合体系的局域表面等离子体共振耦合吸收峰位相一致,说明该体系存在两种共振耦合模式。该研究结果为将来开发ZnO基纳米发光器件提供了一条新的途径。Ag nanowires and ZnO quantum dots were fabricated by chemical methods. The surface morphologies, structures and optical properties were investigated. It is found that both Ag nanowires and ZnO quantum dots exhibit single crystal structure with average diameters of 160 nm and 5 nm, respectively. The enhanced ultraviolet photoluminscence was observed from ZnO quantum dots after mixed with Ag nanowires. The enhancement ratio is 30-fold for emission at 345 nm and 12-fold for that at 383 nm. These enhancement emission positions coincide with the localized surface plasmon resonant absorption peaks of Ag nanowires, which indicate that there are two localized surface plasmon resonant modes in Ag nanowires. This work may give a new approach to design ZnO based nano light-emitting devices.

关 键 词：ZnO量子点 AG纳米线 局域表面等离子体 

分 类 号：O484.4[理学—固体物理] O472+.3[理学—物理]