铜掺杂氧化锌薄膜阻变特性的研究  

Characteristics of Copper Doped Zinc Oxide Thin Film Resistive Switching

作　　者：杨帆[1] 韦敏[1] 邓宏[1] 杨胜辉[1] 刘冲[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《发光学报》2014年第5期604-607,共4页Chinese Journal of Luminescence

基　　金：中央高校基本科研业务费;中国高等学校博士学科点科研基金(20110185110014)资助项目

摘　　要：以ZnO∶Al为底电极,Cu为顶电极,在同种工艺条件下分别制备了类电容结构的纯ZnO阻变器件和ZnO∶2%Cu阻变器件,分析比较了两种器件的典型I-V特性曲线、置位电压(V Set)和复位电压(V Reset)的分布范围、器件的耐久性。结果显示,ZnO∶Cu阻变器件较纯ZnO阻变器件有更大的开关比和更稳定的循环性能。另外,研究了ZnO∶Cu阻变器件的阻变机理,通过对其I-V特性曲线分析得出以下结论:ZnO∶Cu阻变器件在高阻态遵循空间电荷限制电流效应,低阻态符合欧姆定律。Pure ZnO resistive switching and ZnO:2%Cu resistive switching with sandwich structure were fabricated in the same conditions. The bottom electrode was ZnO:Al, and the top electrode was Cu for the resistive switchings. The switching characteristics such as endurance, variations of threshold voltage as well as distribution of resistance were investigated. The results demonstrate that the ZnO:Cu devices exhibit more excellent switching performance than ZnO devices. In addition, the switching mechanism of ZnO:Cu resistive device were also studied in this paper. The I-V characteristics of the device indicate that the conduction mechanisms of high and low resistance states can be explained by trap-controlled space charge limited current (SCLC) and Ohmic's law, respectively.

关 键 词：铜掺杂氧化锌 阻变开关 空间电荷限制电流效应 

分 类 号：TN304.21[电子电信—物理电子学]