N2流量对N掺杂MgZnO薄膜结构和性能的影响  

Effects of N_2 Flux Ratio on The Structure and Properties of MgZnO∶N Films

作　　者：高丽丽[1,2] 李永峰[2] 徐莹[2] 张淼[1] 姚斌[2] 

机构地区：[1]北华大学物理学院,吉林吉林132013 [2]吉林大学物理学院,吉林长春130012

出　　处：《发光学报》2014年第6期689-694,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(11274135);吉林省教育厅“十二五”科学技术研究项目(2013189)资助

摘　　要：利用射频磁控溅射方法,使用Mg0.04Zn0.96O陶瓷靶材,选用不同流量比的氮气和氩气混和气体作为溅射气体,在石英基片上生长N掺杂MgxZn1-xO合金薄膜。研究了氮流量比对薄膜组分、结构、形貌、电学性质和拉曼光谱的影响。结果显示:随着溅射气氛中氮流量比的增加,薄膜中Mg含量增加,薄膜表面颗粒尺寸减小,结晶质量变差,电阻率逐渐增大,导电类型发生转变。在氮流量比为20%时,获得了最好的p型导电薄膜。另外,随着氮流量比的增加,拉曼光谱中与NO相关的位于272 cm-1、642 cm-1左右的振动峰逐渐增强,表明NO的浓度随着氮流量比的加大而有所增加。Using Mg0.04Zn0.96O target,N doped MgZnO films were prepared on quartz substrate by radio frequency magnetron sputtering technique.The effects of N2/( N2+ Ar) flux ratio on the morphology,structure and properties of annealed MgZnO thin films were investigated.With the increasing flux ratio of N2/( N2+ Ar),the content of Mg increases,the average grain size becomes smaller,the crystal quality degrades,the resistivity increases,and the conductivity of the film changes.When the flux ratio of N2/( N2+ Ar) is 20%,the MgZnO∶ N film behaves the best p-type conductivity property.Furthermore,the Raman peaks of the N for O site( NO) at 272 and 642 cm- 1become stronger with the flux ratio of N2/( N2+ Ar) increasing.It can be concluded that the doping concentration of N for O site( NO) increases with the flux ratio of N2/( N2+ Ar) increasing.

关 键 词：射频磁控溅射技术 N掺杂MgZnO薄膜 氮流量比 光电性能 

分 类 号：O484.4[理学—固体物理] O472[理学—物理]