Al掺杂浓度对ZnO陶瓷释能电阻材料性能的影响  

Effects of Al Doping Concentration on ZnO Energy Absorption Materials

作　　者：杨胜辉[1] 邓宏[1] 韦敏[1] 邓雪然[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《发光学报》2014年第6期722-726,共5页Chinese Journal of Luminescence

基　　金：中央高校基本科研业务费;中国高等学校博士学科点科研基金(20110185110014)资助项目

摘　　要：为了制备ZnO释能电阻并研究Al掺杂浓度对ZnO释能电阻材料的影响,通过改进的制陶工艺制备了不同Al掺杂浓度的ZnO导电陶瓷.实验结果表明,Al掺杂浓度对ZnO释能电阻的导电性、能量密度和线性度均有较大的影响.Al的掺杂能较好地改善ZnO释能电阻的线性度,非线性系数可低至1.02; Al掺杂能很好地控制ZnO的电阻率,使其达到0.54 Ω·cm;Al掺杂还能较好地改善ZnO陶瓷的均匀性和密度,从而提高ZnO释能电阻的能量吸收密度,能量吸收密度高达720 J/cm3,较金属释能材料高出2～3倍.Al-doped ZnO conductive ceramics were fabricated in order to determine the effects of Al doping concentration on ZnO energy absorption materials. The experimental results show that Al doping concentration has great effects on the linearity, conductivity, and energy absorption density of ZnO energy absorption materials. The doping of Al2O3 can improve the linearity of ZnO conductive ceramic by reducing the barriers of ZnO grains, and the nonlinear coefficient can be as low as 1.02. When the doping mole fraction of Al is 1%, the resistivity of ZnO conductive ceramic is the lowest (0.54 Ω·cm). Al doping can improve the uniformity and density of ZnO conductive ceramic, as a result, the energy absorption density reaches to 720 J/cm3, 2~3 times higher than that of metal energy-release materials.

关 键 词：氧化锌释能材料 导电性 能量吸收密度 线性度 

分 类 号：O484.4[理学—固体物理] TB34[理学—物理]