基于门控制模式的单光子探测电路设计  

Design of Single-photon Detection Circuits Based on Gate-mode

作　　者：周金运[1] 张鹏飞[1] 彭孝东[1] 林清华[1] 廖常俊[2] 刘颂豪[2] 

机构地区：[1]广东工业大学应用物理学院,广东广州510090 [2]华南师范大学信息光电子科技学院,广东广州510030

出　　处：《半导体光电》2004年第4期304-307,共4页Semiconductor Optoelectronics

基　　金：广东省高教厅资助项目(Z03027);广东省科技计划项目 (2 0 0 3A1 0 3 0 40 5);国家"973"计划资助项目(2 0 0 1CB3 0 93 0 0 )

摘　　要：　基于门控制模式的雪崩抑制方法,对工作波长为1.31μm的单光子探测器件InGaAs/InP雪崩光电二极管的高压电源和单光子信号检测电路进行了设计,同时对设计中所涉及的关键问题进行了分析。通过巧妙设计脉冲发生器的单稳态电路等效地实现了直流电平叠加脉冲的"光子门",通过使用跨阻前置放大器和精密比较甄别器等能在一定程度上提高探测的灵敏度。Based on the method of gate-mode avalanche quench, the circuits of a high voltage supply and the single photon signal detection for 1.31 μm single photon InGaAs/InP avalanche photodiode are designed. Meanwhile some key problems involved in the design are analyzed. The 'photon gate' superimposing a pulse on DC level is equivalently achieved by ingeniously designing the single stable circuit of pulse generator. The sensitivity for detecting a weak single photon signal can be improved to a certain extent by using a transimpedance amplifier and by using a precise discriminator.

关 键 词：单光子探测 门控制模式 INGAAS-APD 量子保密通信 雪崩抑制 

分 类 号：TN36[电子电信—物理电子学]