Bi_2O_3掺杂对Mg_4Nb_2O_9陶瓷的微结构及微波介电性能的影响  

Effects of Bi_2O_3 Addition on Microstructure and Microwave Dielectric Properties of Mg_4Nb_2O_9 Ceramics

作　　者：马建立[1] 付志粉[1] 高娟[1] 汤永新[1] 

机构地区：[1]安徽理工大学理学院,安徽淮南232001

出　　处：《材料科学与工程学报》2014年第2期234-237,共4页Journal of Materials Science and Engineering

基　　金：安徽理工大学青年教师科学研究基金资助项目(QN201328);安徽理工大学硕博基金资助项目;安徽理工大学本科教学工程-物理教学团队建设资助项目

摘　　要：采用固相反应法制备了Mg4Nb2O9基微波介质陶瓷,研究了Bi2O3掺杂对Mg4Nb2O9陶瓷烧结行为、相结构、显微结构及微波介电性能的影响。实验结果表明:Mg4Nb2O9陶瓷烧结温度随Bi2O3掺杂量的增加而减小,添加2.0wt%Bi2O3,烧结温度从1350℃降低至1175℃;随Bi2O3添加量从0.0wt%增大到3.0wt%,最强峰(104)晶面间距d值由2.756nm增大至2.769nm;Mg4Nb2O9陶瓷的微波介电性能随Bi2O3掺杂量增加而变化;掺杂2.0wt%Bi2O3的Mg4Nb2O9陶瓷在1175℃保温2小时烧结,获得亚微米级陶瓷,且具有最佳的微波介电性能,εr为12.58,Q×f为71949.74GHz。Mg4Nb2O9 microwave dielectric ceramics were prepared via the solid state reaction method.The effects of Bi2O3doping on the sintering behavior,phase structure,microstructure and microwave dielectric properties of the Mg4Nb2O9ceramics were studied.With increasing Bi2O3doping,the sintering temperature of Mg4Nb2O9ceramics decreases.Lowering the sintering temperature from 1350℃to 1175℃)could be effectively achieved by adding Bi2O3up to 2.0wt%.The Bi2O3doping from 0.0wt%to 3.0wt%increases the d spacing of(104)plane from 2.756nm to 2.769nm.Microwave dielectric properties of the Mg4Nb2O9ceramics also change with increasing Bi2O3-doped.At 1175℃for 2h,2.0wt% Bi2O3-doped Mg4Nb2O9ceramics possess submicron grains and show best dielectric properties:εr=12.58and Q×f=71949.74GHz.

关 键 词：材料科学 铌酸镁基陶瓷 固相反应 微波介电性能 

分 类 号：TQ174.1[化学工程—陶瓷工业]