单一取向Cu_2O纳米棒的一种工业制备技术  

An Industrial Preparation Technique for Well-aligned Cu_2O Nanorods

作　　者：原宏宇 苑梦尧[1] 刘静[1] 伊福廷[1] 吴忠华[1] 王焕华[1] 张杰[1] 

机构地区：[1]中国科学院高能物理研究所,北京100049

出　　处：《材料科学与工程学报》2014年第3期339-343,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金(大装置联合基金)资助项目(10979057);国家自然科学基金面上资助项目(11275228)

摘　　要：作为一种直接带隙p型半导体材料,Cu2O在很多工业领域都有良好的应用前景,而Cu2O纳米棒因其一维纳米几何而具有更诱人的性能。然而缺少低成本的制备方式限制了Cu2O纳米棒的工业应用。为了解决这个问题,我们探索了热蒸发掠射角沉积加后退火处理的制备方法,成功获得了取向一致的多晶Cu2O纳米棒阵列薄膜,为Cu2O及类似材料的纳米棒薄膜的大规模工业化生产找到了一种低成本的制备技术。As a direct band-gap p-type semiconductor,Cu2O has a promising prospect in various industrial applications.The Cu2O nanorods film assumes many new attractive performances due to its nanoscale one-dimensional feature. However,lack of low-cost preparation technique limits the industrial applications of Cu2O nanorods film.To solve this problem,we explored a fabrication technique that combines thermal evaporation glancing angle deposition with post-deposition annealing,and successfully obtained well aligned Cu2O polycrystalline nanorods array films.This research provides a low-cost preparation technique suitable for large-scale industrial production of nanorods films of Cu2O and similar materials.

关 键 词：CU2O 掠角沉积 热蒸发 后退火 纳米棒 

分 类 号：TB383.1[一般工业技术—材料科学与工程]