n型Si侧蚀的电学机理研究  

The Electronic Mechanism of n-Si Side-wall Etching

作　　者：谈嘉慧 陈之战[1] 张永平[1] 何鸿[1] 

机构地区：[1]上海师范大学光电子材料与器件重点实验室

出　　处：《功能材料与器件学报》2014年第1期31-36,共6页Journal of Functional Materials and Devices

基　　金：973计划预研专项"超快大功率碳化硅光导开关关键科学问题研究(2012CB326402);上海市科委创新项目"欧姆接触高温稳定性研究(13ZZ108);上海市科学技术委员会重点"碳化硅高温压力传感器设计及工艺开发(13520502700)

摘　　要：本文利用电化学刻蚀的方法在n型Si衬底上制备了不同形貌的多孔硅。扫描电子显微镜观察发现不同刻蚀条件制备的样品呈现腐蚀程度不同但腐蚀方向相同的侧向腐蚀。实验和理论分析表明适当电注入的空穴浓度是形成光滑孔壁的关键,过量注入的空穴在侧壁形成耗尽层,促使体硅少子漂移是侧向腐蚀的主要原因。The n-type porous silicon with different morphologies were synthesized by the electrochemical corrosion method.Different kinds of side-wall etching in same directions were observed by SEM in spite of different corrosion conditions.Experimental and theoretical analysis showed that the appropriate intensity of electrical injection holes played a critical role in forming the smooth side-wall.The overdosing holes will form barrier layer in the wall,which promote the minority carrier in the bulk to drift from the side-wall to interface between the side-wall and the electrolyte.

关 键 词：多孔硅 侧蚀分析 控制方法 

分 类 号：TB34-55[一般工业技术—材料科学与工程]