One-step synthesis route of the aligned and non-aligned single crystalline α-Si_3N_4 nanowires  

作　　者：shkoor AHMAD 

机构地区：[1]Beijing National Center for Electron Microscope Laboratory, Department of Materials Science and Engineering, Tsinghua University

出　　处：《Science China(Technological Sciences)》2009年第1期1-5,共5页中国科学（技术科学英文版）

基　　金：Supported by the National 973 Project of China;the National Natural Science Foundation of China (Grant No. 90206046)

摘　　要：This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si_3N_4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050℃. The as-grown products were characterized by employing XRD, SEM, HRTEM and photoluminescence. The microscopic results revealed that the products consist of single crystalline aligned and nonaligned α-Si_3N_4 NWs having a same diameter range of 30-100 nm and different lengths of about hundreds of microns. The XRD observation revealed that the products consist of α-phase Si_3N_4 NWs. The room temperature PL spectra indicated that the NWs have good emission property. The non-aligned NWs were formed at lower temperature as compared with aligned NWs. Our method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned α-Si_3N_4 NWs at a relatively low temperature. The possible growth mechanism was also briefly discussed.

关 键 词：Si_3N_4 nanowires ALIGNED non-aligned CRYSTALLINE 

分 类 号：TB383.1[一般工业技术—材料科学与工程]