Low temperature synthesis of SiCN nanostructures  

作　　者：CHENG WenJuan MA XueMing 

机构地区：[1]State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200062,China

出　　处：《Science China(Technological Sciences)》2009年第1期28-31,共4页中国科学（技术科学英文版）

基　　金：Supported by the National Natural Science Foundation of China (Grant No. 60606004)

摘　　要：Silicon carbon nitride (SiCN) nanowires, nanorods and nanotubes have gained much attention due to their excellent field emission and photoluminescence properties. These nanostructures were usually grown using catalysts at high temperature (800–1000 °C). In this paper, synthesis of SiCN nanostructures at a temperature less than 500°C is reported. Various kinds of SiCN nanostructures were synthesized using microwave plasma chemical vapor deposition method. Gas mixtures of CH4, H2 and N2 were used as precursors and Si chips were inserted in the sample holder at symmetrical positions around the specimen as additional Si sources. Metallic gallium was used as the liquid medium in a mechanism similar to vapor-liquid-solid. Morphologies of the resultant were characterized by field emission scanning electron microscopy. Energy dispersive spectrometry and X-ray photoelectron spectroscopy were used to characterize their compositions and bonding states.

关 键 词：SICN GALLIUM NANOSTRUCTURE LOW TEMPERATURE 

分 类 号：TB383.1[一般工业技术—材料科学与工程]