Optimization of the process for preparing Al-doped ZnO thin films by sol-gel method  

作　　者：CHEN JianLin CHEN Ding CHEN ZhenHua 

机构地区：[1]College of Materials Science and Engineering,Hunan University,Changsha 410082,China

出　　处：《Science China(Technological Sciences)》2009年第1期88-94,共7页中国科学（技术科学英文版）

摘　　要：Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical and chemical changes during thermal treatment were analyzed by TG-DSC spectra and the crystallization quality was characterized by XRD patterns. The optimized preheating and post-heating temperatures were determined at ～420°C and ～530°C, respectively. From thermodynamic and kinetics views, we investigated the mechanism of orientation growth with (002) plane parallel to the substrates. The surface morphologies of the films, post-heated at 420°C, 450°C, 530°C and 550°C, respectively, were observed by SEM micrographs. The film post-heated at 530°C shows a homogenous dense microstructure and exhibits the minimum sheet resistance of 140 Ω/Sq. The visible optical transmittance of all the films is beyond 90%. In addition, the annealing treatment in vacuum can contribute greatly to the electrical conductivity.

关 键 词：TRANSPARENT CONDUCTING OXIDE sol-gel method zinc OXIDE aluminum thin films 

分 类 号：TB383.2[一般工业技术—材料科学与工程]