Observation of electron weak localization and correlation effects in disordered graphene  

作　　者：TAN ChangLing TAN ZhenBing MA Li QU FanMing YANG Fan CHEN Jun LIU GuangTong YANG HaiFang YANG ChangLi LU Li 

机构地区：[1]Daniel Chee Tsui Laboratory,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]Laboratory of Microfabrication,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2009年第9期1293-1298,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos. 10774172 and 10874220);the National Basic Research Program of China from the MOST (Grant No. 2006CB921304)

摘　　要：We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample.We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample.

关 键 词：GRAPHENE WEAK-LOCALIZATION electron-electron interaction power LAW 

分 类 号：O481[理学—固体物理]