In-situ growth and photoluminescence of β-Ga_2O_3 cone-like nanowires on the surface of Ga substrates  

作　　者：LIU RuiNi1,YANG HeQing1,ZHANG RuiGang1,DONG HongXing1,CHEN XiaoBo1,LI Li1,ZHANG LiHui1,MA JunHu1 & ZHENG HaiRong2 1 Key Laboratory of Macromolecular Science of Shaanxi Province,School of Chemistry and Materials Science,Shaanxi Normal University,Xi’an 710062,China 2 School of Physics & Information Technology,Shaanxi Normal University,Xi’an 710062,China 

出　　处：《Science China(Technological Sciences)》2009年第6期1712-1721,共10页中国科学（技术科学英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant No. 20573072);Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20060718010)

摘　　要：β-Ga2O3 cone-like nanowires have been in-situ grown on the surface of gallium grains and films by heating gallium substrates at 750-1000℃ for 2h in air.The controllable synthesis of β-Ga2O3 nano-wires with different diameters and lengths was achieved by adjusting the heating temperature and time.The as-synthesized products were characterized by means of X-ray diffraction,scanning electron mi-croscopy and transmission electron microscopy.The results showed that the β-Ga2O3 nanowires are single crystalline with a monoclinic structure and have a controllable diameter and length in the range of 30-100nm and 0.5-1.5μm,respectively.A possible mechanism was also proposed to account for the formation of β-Ga2O3 cone-like nanowires.Photoluminescence spectra of the β-Ga2O3 nanowires obtained at different temperatures were measured at room temperature,and a strong blue photolumi-nescence with peaks at 430 and 460nm and a weak red photoluminescence with peak at 713nm were observed.The blue light emission intensity decreases with increasing the reaction temperature,how-ever,the red light emission intensity hardly changes.The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy with a hole on a gallium-oxygen vacancy pair and the nitrogen dopants,etc.,respectively.β-Ga2O3 cone-like nanowires have been in-situ grown on the surface of gallium grains and films by heating gallium substrates at 750—1000℃ for 2h in air.The controllable synthesis of β-Ga2O3 nano-wires with different diameters and lengths was achieved by adjusting the heating temperature and time.The as-synthesized products were characterized by means of X-ray diffraction,scanning electron mi-croscopy and transmission electron microscopy.The results showed that the β-Ga2O3 nanowires are single crystalline with a monoclinic structure and have a controllable diameter and length in the range of 30—100nm and 0.5—1.5μm,respectively.A possible mechanism was also proposed to account for the formation of β-Ga2O3 cone-like nanowires.Photoluminescence spectra of the β-Ga2O3 nanowires obtained at different temperatures were measured at room temperature,and a strong blue photolumi-nescence with peaks at 430 and 460nm and a weak red photoluminescence with peak at 713nm were observed.The blue light emission intensity decreases with increasing the reaction temperature,how-ever,the red light emission intensity hardly changes.The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy with a hole on a gallium-oxygen vacancy pair and the nitrogen dopants,etc.,respectively.

关 键 词：β-Ga2O3 cone-like NANOWIRES PHOTOLUMINESCENCE IN-SITU growth 

分 类 号：TB383.1[一般工业技术—材料科学与工程]