The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon  

作　　者：Yang, J. J. Liu, B. Liao, X. D. Jiao, G. H. Xu, K. W. 

机构地区：[1]Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China [2]CAS, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710049, Peoples R China [3]Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China

出　　处：《稀有金属材料与工程》2012年第S1期120-123,共4页Rare Metal Materials and Engineering

基　　金：NSFC(11075112,61040034 and 51101108);Specialized Research Fund for the Doctoral Program of Higher Education(new teachers,20100181120112);The National Basic Research Program of China(Grant No.2010CB631002)

摘　　要：The main purpose of the present micro-structural analysis by transmission electron microscopy(TEM)and X-ray diffraction(XRD)was to investigate whether amorphous Zr-Ge-N films are a potential candidate as a diffusion barrier for Cu wiring used in Si devices.The Zr-Ge-N films were prepared by a radio frequency(RF)reactive magnetron sputter-deposition technique using N2 and Ar mixed gas,and the film structure was found to be sensitive to the gas flow ratio of N2 vs.Ar during sputtering.Polycrystalline Zr-Ge-N films were obtained when the N2/(Ar+N2)ratio was smaller than 0.2 and amorphous-like Zr-Ge-N films were obtained when the ratio was larger than 0.3.Diffusion barrier test was performed by annealing the Cu/Zr-Ge-N/Si film stack under Ar atmosphere.The deposited Zr-Ge-N(C)films remained amorphous even after high temperature annealing.The Cu diffusion profile in the film was assessed by the Auger electron spectroscopy(AES).The results indicate that Cu diffusion was minimal in amorphous Zr-Ge-N(C)films even at high annealing temperatures of 800℃.The main purpose of the present micro-structural analysis by transmission electron microscopy(TEM)and X-ray diffraction(XRD)was to investigate whether amorphous Zr-Ge-N films are a potential candidate as a diffusion barrier for Cu wiring used in Si devices.The Zr-Ge-N films were prepared by a radio frequency(RF)reactive magnetron sputter-deposition technique using N2 and Ar mixed gas,and the film structure was found to be sensitive to the gas flow ratio of N2 vs.Ar during sputtering.Polycrystalline Zr-Ge-N films were obtained when the N2/(Ar+N2)ratio was smaller than 0.2 and amorphous-like Zr-Ge-N films were obtained when the ratio was larger than 0.3.Diffusion barrier test was performed by annealing the Cu/Zr-Ge-N/Si film stack under Ar atmosphere.The deposited Zr-Ge-N(C)films remained amorphous even after high temperature annealing.The Cu diffusion profile in the film was assessed by the Auger electron spectroscopy(AES).The results indicate that Cu diffusion was minimal in amorphous Zr-Ge-N(C)films even at high annealing temperatures of 800℃.

关 键 词：Zr-Ge-N FILMS DIFFUSION BARRIER micro-structural thermal stability 

分 类 号：TG146.4[一般工业技术—材料科学与工程]